Title:
レジスト材料及びパターン形成方法
Document Type and Number:
Japanese Patent JP4092571
Kind Code:
B2
Abstract:
A polymer comprising recurring units of formulae (1), (2) and (3) increases a dissolution rate in an alkali developer under the action of an acid. R<1>, R<2 >and R<5 >are H or CH3, R<3 >and R<4 >are H or OH, and X is a tertiary exo-alkyl group having a bicyclo[2.2.1]heptane structure, represented by any of formulae (X-1) to (X-4): wherein R<6 >is a C1-C10 alkyl group. A resist composition comprising the inventive polymer has a sensitivity to high-energy radiation, improved resolution and minimized line edge roughness and lends itself to micropatterning with electron beams or deep UV for VLSI fabrication.
Inventors:
Takeshi Watanabe
Tsunehiro Nishi
Akiyuki Funatsu
Takao Yoshihara
Tsunehiro Nishi
Akiyuki Funatsu
Takao Yoshihara
Application Number:
JP2003286647A
Publication Date:
May 28, 2008
Filing Date:
August 05, 2003
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G03F7/039; C08F220/18; C08F220/28; G03C1/76; G03F7/004; H01L21/027
Domestic Patent References:
| JP2003167347A | ||||
| JP2000336121A |
Attorney, Agent or Firm:
Takashi Kojima
Saori Shigematsu
Katsunari Kobayashi
Saori Shigematsu
Katsunari Kobayashi