Title:
フォトレジスト単量体とその製造方法、フォトレジスト重合体とその製造方法、これを利用したフォトレジスト組成物、及び、半導体素子
Document Type and Number:
Japanese Patent JP4097391
Kind Code:
B2
Abstract:
The present invention provides compounds represented by formulas 1a and 1b; and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G: where R1, R2 and R3 are those defined herein.
Inventors:
Lee Nemori
Chung Zhao Chang
White base ho
Chung Zhao Chang
White base ho
Application Number:
JP2000238953A
Publication Date:
June 11, 2008
Filing Date:
August 07, 2000
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C07C49/653; C07B61/00; C07C45/70; C07C45/72; C07C49/743; C08F16/02; C08F16/12; C08F299/00; G03F7/039; H01L21/027
Domestic Patent References:
| JP58025630A | ||||
| JP2146045A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune