Title:
集積回路デバイスの製造方法
Document Type and Number:
Japanese Patent JP4127359
Kind Code:
B2
Abstract:
A rapid thermal process (RTP) provides steps wherein silicon wafers that are pre-coated with barrier metal films by either in-situ or ex-situ CVD or physical vapor deposition (PVD) are pre-treated, prior to deposition of a Cu film thereon, in a temperature range of between 250 and 550 degrees Celsius in a non-reactive gas such as hHydrogen gas (H2), argon (Ar), or helium (He), or in an ambient vacuum. The chamber pressure typically is between 0.1 mTorr and 20 Torr, and the RTP time typically is between 30 to 100 seconds. Performing this rapid thermal process before deposition of the Cu film results in a thin, shiny, densely nucleated, and adhesive Cu film deposited on a variety of barrier metal surfaces. The pre-treatment process eliminates variations in the deposited Cu film caused by Cu precursors and is insensitive to variation in precursor composition, volatility, and other precursor variables. Accordingly, the process disclosed herein is an enabling technology for the use of metal organic CVD (MOCVD) Cu in IC fabrication.
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Inventors:
Waypan
Jar-Semmer
Davit russell evans
Shen Ten Suu
Jar-Semmer
Davit russell evans
Shen Ten Suu
Application Number:
JP2002079598A
Publication Date:
July 30, 2008
Filing Date:
March 20, 2002
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/3205; C23C16/02; C23C16/18; H01L21/28; H01L21/285; H01L21/768
Domestic Patent References:
| JP11274157A | ||||
| JP2000195863A | ||||
| JP10256252A |
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Takeshi Oshio
Takaaki Yasumura
Takeshi Oshio