Title:
不揮発性半導体記憶装置
Document Type and Number:
Japanese Patent JP4133692
Kind Code:
B2
Abstract:
A nonvolatile semiconductor memory device includes a first memory cell having a conductive/nonconductive state thereof substantially controlled in response to data stored therein and providing passage of a first current amount in the conductive state, a first bit line connected to the first memory cell, a reference cell connected to the first bit line and providing passage of a second current amount smaller than the first current amount, a second bit line, a second memory cell connected to the second bit line and providing passage of the first current amount, and a sense amplifier connectable to the first bit line and the second bit line through electrical couplings.
Inventors:
Yoshihiko Kamata
Application Number:
JP2003306491A
Publication Date:
August 13, 2008
Filing Date:
August 29, 2003
Export Citation:
Assignee:
Mentor Graphics Corporation
International Classes:
G11C16/06; G11C16/04; G11C16/28
Domestic Patent References:
| JP5250889A | ||||
| JP11003599A | ||||
| JP2002216488A |
Attorney, Agent or Firm:
Tadahiko Ito
Shinsuke Onuki
Tadashige Ito
Shinsuke Onuki
Tadashige Ito