Title:
バイポーラトランジスタの形成方法
Document Type and Number:
Japanese Patent JP4138806
Kind Code:
B2
Abstract:
Production of bipolar transistor involves formation of semiconductor substrate with n type collector region, provision of single crystal p type base region and basic p type junction region over the basic n,p region, provision of insulation region over base p type junction region, formation of window (F) in the insulation region, provision of side wall spacers in the window, and differential separation and structuring of emitter layer.
Inventors:
Beck, Joseph
Meister, Thomas
Stengle, Reinhard
Schaefer, Herbert
Meister, Thomas
Stengle, Reinhard
Schaefer, Herbert
Application Number:
JP2005518262A
Publication Date:
August 27, 2008
Filing Date:
March 24, 2004
Export Citation:
Assignee:
Infineon TechnologiesAG
International Classes:
H01L21/331; H01L29/06; H01L29/08; H01L29/732; H01L29/737
Domestic Patent References:
| JP62283624A | ||||
| JP2000077425A | ||||
| JP8316239A | ||||
| JP4364044A | ||||
| JP10326793A |
Foreign References:
| WO2001004960A1 |
Other References:
T.F.Meister et al,SiGe base bipolar technology with 74GHz fmax and 11ps gate delay,IEDM Technical Digest,1995年,pp.739-741
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Makoto Onda