温度センサ - MITSUMI ELECTRIC CO.,LTD.

Title:

温度センサ

Document Type and Number:

Japanese Patent JP4139950

Kind Code:

B2

Abstract:

To provide a CMOSN-type substrate diode for temperature sensor which is not affected by a parasitic transistor with low consumption current, and a temperature sensor.

The CMOSN-type substrate diode for temperature sensor (50) is provided with an n-type substrate (51), a p-type well layer (52) formed in the n-type substrate, an n-type high concentration layer (53) formed in the p-type layer and a p+-diffusion layer (57) formed near a surface of the n-type high concentration layer. The diode (50) is formed by pn-junction of the p+-diffusion layer and the n-type high concentration layer.

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Inventors:

Kazuhiro Kamiya
Atsushi Watanabe
Shigeki Onodera

Application Number:

JP2002210545A

Publication Date:

August 27, 2008

Filing Date:

July 19, 2002

Export Citation:

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Assignee:

MITSUMI ELECTRIC CO.,LTD.

International Classes:

G01K7/01; H01L27/092; H01L21/8238; H01L29/861; H01L35/00

Domestic Patent References:

JP55113941U
JP55154429A
JP56135963A
JP58164250U
JP4096267A
JP4160328A
JP5099942A
JP7142501A
JP2004055844A

Attorney, Agent or Firm:

Kenho Ikeda

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