Title:
積層薄膜およびその製造方法
Document Type and Number:
Japanese Patent JP4142127
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the value of spontaneous polarization from deteriorating when forming a ferroelectric thin film, especially a PbTiO3 ferroelectric thin film on an Si single crystal substrate. SOLUTION: This laminated thin film is formed on an Si single crystal substrate and composed of an insulating intermediate thin film and a ferroelectric thin film laminated through the insulating intermediate thin film. The ferroelectric thin film is a (001) oriented epitaxial film having a perovskite structure. The insulating intermediate thin film is an epitaxial film having the perovskite structure and the thickness thereof is 0.3-5 nm. The thickness of the ferroelectric thin film is 2-50 nm. Furthermore, a value of the thickness of the ferroelectric thin film divided by the thickness of the insulating intermediate thin film is 1.5-50.
Inventors:
Yoshihiko Yano
Takao Noguchi
Takao Noguchi
Application Number:
JP10382697A
Publication Date:
August 27, 2008
Filing Date:
April 07, 1997
Export Citation:
Assignee:
tdk Corporation
International Classes:
C30B29/32; H01G7/06; H01L21/8246; H01L27/10; H01L27/105; H01L31/0264; H01L39/24
Domestic Patent References:
| JP7106658A | ||||
| JP7176803A | ||||
| JP4062715A | ||||
| JP6049638A | ||||
| JP6236826A | ||||
| JP8325720A | ||||
| JP10163436A | ||||
| JP8259361A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Hiroaki Aoki
Shiro Terasaki
Hiroaki Aoki