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Title:
積層薄膜およびその製造方法
Document Type and Number:
Japanese Patent JP4142128
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent the value of spontaneous polarization from deteriorating when forming a ferroelectric thin film, especially a PbTiO3 ferroelectric thin film on a substrate composed of an Si single crystal, etc. SOLUTION: This laminated thin film is formed on an Si single crystal substrate and composed of an electroconductive intermediate thin film and a ferroelectric thin film laminated through the electroconductive intermediate thin film. The ferroelectric thin film is a (001) oriented epitaxial film having a perovskite structure. The electroconductive intermediate thin film is an epitaxial film and the ferroelectric thin film is composed of an oxide, etc., containing Pb and Ti. The electroconductive intermediate thin film has the perovskite structure and is composed of an oxide, etc., containing Ru.

Inventors:
Yoshihiko Yano
Takao Noguchi
Application Number:
JP10677697A
Publication Date:
August 27, 2008
Filing Date:
April 09, 1997
Export Citation:
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Assignee:
tdk Corporation
International Classes:
C30B29/32; G02F1/03; G11B9/02; H01G7/06; H01L21/8246; H01L27/10; H01L27/105; H01L31/0264; H01L39/24
Domestic Patent References:
JP63236797A
JP8330540A
JP7133199A
JP7106658A
JP8325720A
JP6049638A
JP4182393A
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Hiroaki Aoki