単結晶シリコンの製造方法、単結晶シリコンウェーハの製造方法、単結晶シリコン製造用種結晶、単結晶シリコンインゴットおよび単結晶シリコンウェーハ

Title:

Document Type and Number:

Japanese Patent JP4142332

Kind Code:

B2

Abstract:

A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are disclosed. Single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along the axis of the seed crystal, using a single crystal (1) in which the <110> crystal orientation (10) is inclined at a predetermined angle θ with respect to the axial direction (9) so that the edge direction (8) of the ä111ü crystal plane is inclined with respect to the axial direction (9). When single crystal silicon is grown while pulling up a seed crystal by the CZ method, a single crystal silicon ingot of a large diameter and a heavy weight can be pulled up by eliminating slip dislocations from the thick crystal.

Inventors:

Tetsuhiro Iida
Yutaka Shiraishi
Ryota Suewaka
Junsuke Tomioka

Application Number:

JP2002118281A

Publication Date:

September 03, 2008

Filing Date:

April 19, 2002

Export Citation:

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