To uniform each main electrode potential of a plurality of semiconductor chips, to suppress a high frequency radio wave flowing between the semiconductor chips, and to ensure a stable operation of a semiconductor device.

Wiring patterns 3a, 3b on emitter substrates 3A, 3B are connected to emitters of corresponding IGBT chips 1A, 1B via aluminum wires 9A, 9B, and ends of the patterns 3a, 3b facing each other are connected to projected first and third pads 13AP1, 13BP3. On the respective substrates 3A, 3B, second and fourth pads 13AP2, 13BP4 are arranged so as to face the pads 13AP1, 13BP3, inductor members 13A, 13B are electrically arranged. Inductance values of the members 13A, 13B are sufficiently greater than those of the aluminum wirings 9A, 9B, 11, 12.

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