Title:
Pドープシリコン単結晶の製造方法
Document Type and Number:
Japanese Patent JP4207577
Kind Code:
B2
Abstract:
The present invention is a method of producing a P(phosphorus)-doped silicon single crystal by Czochralski method, wherein, at least, a growth of the single crystal is performed so that an Al (aluminum) concentration is 2x1012 atoms/cc or more. Thereby, there can be provided a method of easily and inexpensively producing a P(phosphorus)-doped silicon single crystal of defect-free region having an excellent capability of electrical characteristics to be high breakdown voltage, which contains neither, for example, V region, OSF region, nor large dislocation cluster (LSEPD, LFPD) region.
Inventors:
Masahiro Sakurada
Fusegawa Izumi
Fusegawa Izumi
Application Number:
JP2003010436A
Publication Date:
January 14, 2009
Filing Date:
January 17, 2003
Export Citation:
Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B29/06; C30B15/00; C30B15/04
Domestic Patent References:
| JP8073293A | ||||
| JP2000351690A |
Attorney, Agent or Firm:
Mikio Yoshimiya