Title:
不揮発性記憶装置
Document Type and Number:
Japanese Patent JP4212325
Kind Code:
B2
Abstract:
A memory cell array has a plurality of memory cells and dummy memory cells. A column select portion switches access control to a memory cell in accordance with a mode control signal. The column select portion selects one memory cell column to connect a first or second bit line connected with one selected memory cell and first and second reference data lines connected with the dummy memory cells to a data read circuit in a first mode. The column select portion connects the first and second bit lines respectively connected to paired two selected memory cells storing data complimentary to each other to the data read circuit in a second mode.
Inventors:
Tsukasa Oishi
Application Number:
JP2002286173A
Publication Date:
January 21, 2009
Filing Date:
September 30, 2002
Export Citation:
Assignee:
Renesas Technology Corp.
International Classes:
G11C11/15; G11C13/00; H01L21/8246; H01L27/10; H01L27/105; H01L43/08
Domestic Patent References:
| JP9120700A | ||||
| JP2002008367A |
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai