Title:
圧力センサおよび電気化学的センサを組み合わせたセンサの製造方法
Document Type and Number:
Japanese Patent JP4212667
Kind Code:
B2
Abstract:
The method involves making a combination on a substrate (1) of a polysilicon pressure sensor and an ion selective field effect transistor (ISFET) electrochemical sensor. Electrically conductive regions are formed in the substrate. A base structure for the electrochemical sensor with at least one electrically insulating layer is manufactured. This basic structure is covered with a protective layer which reveals the region for the sensor. A sensor layer (10) for the pressure sensor is deposited and structured and is provided with etching openings. A hollow space (11) is etched from between the sensor layer and the substrate. A planarisation layer of dielectric material is applied over the whole surface. Electrically conductive connections are made to regions provided for electrical connectors. A region provided for the electrochemical sensor is removed by etching and at least one earth metal electrode (21) is deposited and structured. A further protective layer (16,17) for the electrode is deposited. Further layers required for the effectiveness of the arrangement are applied and structured. The sensor layers of the pressure sensor are revealed outwardly into the circumference for the desired function. Control and output transistors can be incorporated.
Inventors:
Claus Abraham-Fuchs
Walter Gumbrecht
Christopher Hieralt
Thomas Sheater
Walter Gumbrecht
Christopher Hieralt
Thomas Sheater
Application Number:
JP15308397A
Publication Date:
January 21, 2009
Filing Date:
May 28, 1997
Export Citation:
Assignee:
Sphere Medical Limited
International Classes:
G01L9/12; H01L49/00; G01L9/00; G01L19/00; G01N27/414; G01N27/416; H01L29/84
Domestic Patent References:
| JP60129654A | ||||
| JP60083379A |
Attorney, Agent or Firm:
Kenji Yoshitake
Yukitaka Nakamura
Konno Akio
Noritaka Yokota
Takeyasu Ito
Yukitaka Nakamura
Konno Akio
Noritaka Yokota
Takeyasu Ito