逐次的横方向結晶化法による処理中及び処理後のシリコンフィルムの表面平坦化法

Japanese Patent JP4220156

B2

Systems and methods for reducing a surface roughness of a polycrystalline or single crystal thin film produced by the sequential lateral solidification process are disclosed. In one arrangement, the system includes an excimer laser (110) for generating a plurality of excimer laser pulses of a predetermined fluence, an energy density modulator (120) for controllably modulating the fluence of the excimer laser pulses such that the fluence is below that which is required to completely melt the thin film, a beam homoginizer (144) for homoginizing modulated laser pulses in a predetermined plane, a sample stage (170) for receiving homoginized laser pulses to effect melting of portions of the polycrystalline or single crystal thin film corresponding to the laser pulses, translating means for controllably translating a relative position of the sample stage (170) with respect to the laser pulses, and a computer (110) for coordinating the excimer pulse generation and fluence modulation with the relative positions of the sample stage (170) to thereby process the polycrystalline or single crystal thin film by sequential translation of the sample stage (170) relative to the laser pulses.

James S
Robert es sposiri
Mark ak loader

JP2001569872A

February 04, 2009

March 21, 2000

Click for automatic bibliography generation  

The Trustees of Columbia University in the City of New York

H01L21/20; B23K26/00; B23K26/06; B23K26/08; H01L21/00; H01L21/26; H01L21/268; H01L21/302; H01L21/31; H01L21/38

JP878330A
JP1276714A
JP2003509845A

WO1997045827A1

Kosaku Sugimura
Kenji Sugimura
Eiji Fujiwara

Previous Patent: JPS4220155

Next Patent: APPARATUS FOR CONTROLLING POURING OF MOLTEN METAL INTO MOLD AND METHOD THEREFOR