Title:
金属配線製造方法
Document Type and Number:
Japanese Patent JP4221737
Kind Code:
B2
Abstract:
A method for manufacturing a metal interconnection includes the steps of, preparing an active matrix provided with a substrate, an insulating layer and an opening formed through the insulating layer, forming a diffusion barrier layer on surfaces of the opening and the insulating layer, forming a protection layer on the diffusion barrier layer, forming a first metal layer into the opening and upon the protection layer, forming a second metal layer on the first metal layer, and polishing back the first and the second metal layer to a top surface of the insulating layer, thereby forming a metal interconnection.
Inventors:
Lee Holy
Application Number:
JP2001000041A
Publication Date:
February 12, 2009
Filing Date:
January 04, 2001
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
H01L21/28; H01L21/283; H01L21/3205; H01L21/306; H01L21/768; H01L23/52
Attorney, Agent or Firm:
Eiji Saegusa
Kakehi Yuro
Takeshi Ohara
Hiroji Nakagawa
Yasumitsu Tate
Kenji Saito
Jun Fujii
Hitoshi Seki
Mutsuko Nakano
Shinichi Mashita
Ryuji Inuchi
Kakehi Yuro
Takeshi Ohara
Hiroji Nakagawa
Yasumitsu Tate
Kenji Saito
Jun Fujii
Hitoshi Seki
Mutsuko Nakano
Shinichi Mashita
Ryuji Inuchi