Title:
容量型シャント・スイッチに適する強誘電性バラクター
Document Type and Number:
Japanese Patent JP4226037
Kind Code:
B2
Abstract:
A ferroelectric varactor suitable for capacitive shunt switching is disclosed. High resistivity silicon with a SiO2 layer and a patterned metallic layer deposited on top is used as the substrate. A ferroelectric thin-film layer deposited on the substrate is used for the implementation of the varactor. A top metal electrode is deposited on the ferroelectric thin-film layer forming a CPW transmission line. By using the capacitance formed by the large area ground conductors in the top metal electrode and bottom metallic layer, a series connection of the ferroelectric varactor with the large capacitor defined by the ground conductors is created. The large capacitor acts as a short to ground, eliminating the need for vias. The concept of switching ON and OFF state is based on the dielectric tunability of the ferroelectric thin-films. At 0 V, the varactor has the highest capacitance value, resulting in the signal to be shunted to ground, thus isolating the output from the input. This results in the OFF state of the switch. By applying a small voltage to the center conductor of the CPW, the varactor's capacitance can be reduced allowing the signal to be transmitted through resulting in the ON state of the device. Such a varactor shunt switch eliminates majority of problems plaguing the RF MEMS shunt switches.
Inventors:
Sabramanian, Glue
Andro Vorobiev
Gevorzian, Spartak
Andro Vorobiev
Gevorzian, Spartak
Application Number:
JP2006536683A
Publication Date:
February 18, 2009
Filing Date:
October 15, 2004
Export Citation:
Assignee:
UNIVERSITY OF DAYTON
International Classes:
H01P1/15; H01L27/08; H01L29/93; H01P1/10; H01P1/18; H01P1/203; H01P11/00
Foreign References:
WO2001015260A1 |
Other References:
D.Kuylenstierna, A.Vorobiev, G.Subramanyam and S.Gevorgian,Tunable electromagnetic bandgap structures based on ferroelectric films,2003 IEEE Antennas and Propagation Society International Symposium digest,米国,IEEE,2003年 7月18日,Vol.4,pp.879 - 882
Attorney, Agent or Firm:
Kazuo Shamoto
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Katsuhiko Sumiyoshi
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Katsuhiko Sumiyoshi
Previous Patent: デカンタ型遠心分離機用スクリュコンベヤ
Next Patent: SELF-ALIGNED SILICIDE BASE BIPOLAR TRANSISTOR; RESISTANCE; THEIR MANUFACTURE
Next Patent: SELF-ALIGNED SILICIDE BASE BIPOLAR TRANSISTOR; RESISTANCE; THEIR MANUFACTURE