Title:
発光素子、その製造方法およびこれを用いた表示装置
Document Type and Number:
Japanese Patent JP4226835
Kind Code:
B2
Abstract:
Provided is a light emitting diode and method for fabricating the same, and a display device using the same, wherein the light emitting diode at least comprises a high refractive index layer on a light transmissive substrate; and an organic electroluminescence (EL) element formed of one organic thin layer or a plurality of organic thin layers interposed between a transparent first electrode and a second electrode formed on the high refractive index layer, and the high refractive index layer has a refractive index higher than that of an emitting layer or has a refractive index of 1.65 or more, and an interface between the high refractive index layer and the light transmissive substrate is roughed to have its center line average roughness in a range of 0.01 mum to 0.6 mum so that light leakage is be prevented and light extraction efficiency becomes higher.
Inventors:
East exit
Hitoshi Ishikawa
Atsushi Oda
Hitoshi Ishikawa
Atsushi Oda
Application Number:
JP2002096704A
Publication Date:
February 18, 2009
Filing Date:
March 29, 2002
Export Citation:
Assignee:
SAMSUNG SDI Co., LTD.
International Classes:
H01L51/50; G09F9/30; H01L27/32; H01L51/52; H05B33/02; H05B33/10; H05B33/14; H05B33/22
Domestic Patent References:
| JP2001230069A | ||||
| JP2000260571A | ||||
| JP2001202827A |
Attorney, Agent or Firm:
Takashi Watanabe
Masatake Shiga
Masatake Shiga
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