To provide a solid-state imaging device in which dynamic range is enlarged while maintaining proper characteristics.

The solid-state imaging device comprises a semiconductor substrate defining a light-receiving region, a large number of pixels formed in the light-receiving region each including a high-sensitivity photoelectric conversion element and a low-sensitivity photoelectric conversion element, a light-shielding film formed on the light-receiving region and having a single opening, exposing at least a part of the high-sensitivity photoelectric conversion element and the low-sensitivity photoelectric conversion element above each pixel, an on-chip microlens formed above the opening of the light-shielding film and converging incident light, and an inner lens formed between the light-shielding film and the on-chip microlens and arranged to receive and further converge the light converged by the on-chip microlens, except a part thereof which is directed toward the opening, without passing through the inner lens.

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