Title:
不透明なゲート層の位置合わせ用マーカ、このようなマーカの製作方法、及びリソグラフィ機器でのこのようなマーカの使用
Document Type and Number:
Japanese Patent JP4264075
Kind Code:
B2
Abstract:
A method for manufacturing a marker structure including line elements and trench elements arranged in a repetitive order includes filling the trench elements with silicon dioxide and leveling the marker structure. A sacrificial oxide layer is grown on the semiconductor surface, and a first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a surface portion of the marker structure different from the first subset.
Inventors:
Richard Johannes Franciscus van Haren
Sanya Ising Larbahad Elsing
Henry Megens
Sanya Ising Larbahad Elsing
Henry Megens
Application Number:
JP2005189783A
Publication Date:
May 13, 2009
Filing Date:
June 29, 2005
Export Citation:
Assignee:
AS M Netherlands B.V.
International Classes:
H01L21/027; G03F9/00; H01L21/02; H01L29/78
Domestic Patent References:
| JP2000114397A | ||||
| JP2001102440A |
Attorney, Agent or Firm:
Yoshiyuki Inaba
Shinji Oga
Toshifumi Onuki
Shinji Oga
Toshifumi Onuki
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