Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
パターン化された誘電体層の形成方法、薄膜EL素子の製造方法および薄膜EL素子
Document Type and Number:
Japanese Patent JP4267868
Kind Code:
B2
Abstract:

To provide a thin film EL element with a dielectric layer and a sol-gel dielectric layer added thereto, having low cost, good productivity, no defect and high reliability by preventing the removal of the sol-gel dielectric film deposited on a unnecessary portion due to the addition of the sol-gel dielectric layer and the separation or breakage of a lower electrode layer due to the separation of the sol-gel dielectric film deposited on the unnecessary portion during processing.

The thin film EL element comprises an electrically insulating substrate, the lower electrode layer having a pattern on the substrate, the dielectric layer for covering at least part of the lower electrode layer, and at least a luminous layer and an upper electrode layer laminated on the dielectric layer, at least one of the lower and upper electrode layers being a transparent electrode layer, the dielectric layer having a layered structure including the dielectric layer formed by at least solution coating firing. A thin film EL element manufacturing method comprises calcining the dielectric layer formed by the solution coating firing at a non-crystallizing temperature, followed by patterning and firing. The thin film EL element is manufactured in this method.

COPYRIGHT: (C)2004,JPO


Inventors:
Uematsu Katsuya
Minoru Okoba
Masashi Miwa
Yukihiko Shirakawa
Application Number:
JP2002130006A
Publication Date:
May 27, 2009
Filing Date:
May 01, 2002
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
IFire IP Corporation
International Classes:
H05B33/10; H05B33/14; H05B33/22; H05B33/26
Domestic Patent References:
JP8129181A
JP2002373791A
JP2003077677A
JP2001250677A
JP2001175198A
JP2001250683A
Attorney, Agent or Firm:
Yuichi Yamada
Masakazu Noda
Ikeda adult