To provide an ion implanting device capable of enhancing safety in the transportation of material gas from a ground potential side to a high-potential side while maintaining the pressure of the material gas to be high.
The ion implanting device 1 comprises: a treatment chamber 2 held at the ground potential; an ion source 4 held at high potential; a main insulator 6 having an opening 6a for connecting the ion source 4 and the treatment chamber 2 in an electrically insulated state and allowing both of them to communicate each other; and a material gas supply device 10 for supplying material gas to the ion source 4. The main insulator 6 has a through hole 6b penetrating from the side of the treatment chamber 2 to the that of the ion source 4. The material gas supply device 10 has an insulating tube 12 that is provided over the entire length in the through hole 6b and is made of a material having higher dielectric strength than that of the main insulator 6. The insulating tube 12 is a hollow cylindrical member or an insulating coating.
COPYRIGHT: (C)2008,JPO&INPIT
Ichiro Nakamoto
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Yasuharu Nakasone
Toshihiro Nomura