Title:
半導体製造方法
Document Type and Number:
Japanese Patent JP4275770
Kind Code:
B2
Abstract:
Capacitances (308) in an impedance-matching box (306) for an RF coil (104), in a plasma deposition system for depositing a film of sputtered target material (110) on a substrate (112), can be varied during the deposition process so that the RF coil and substrate heating, and the film deposition, are more uniform due to "time-averaging" of the RF voltage distributions along the RF coil.
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Inventors:
James Van Go
John Sea. Forster
John Sea. Forster
Application Number:
JP17377098A
Publication Date:
June 10, 2009
Filing Date:
May 18, 1998
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/203; H05H1/46; C23C14/34; C23C14/40; C23C14/54; H01F29/10; H01J37/32; H01L21/302
Domestic Patent References:
| JP8070004A | ||||
| JP2101165A | ||||
| JP7018433A | ||||
| JP5507963A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Yuichi Yamada
Okimoto Kazuaki
Tatsuya Shioda
Shiro Terasaki
Yuichi Yamada
Okimoto Kazuaki