Title:
窒化物系半導体装置
Document Type and Number:
Japanese Patent JP4282708
Kind Code:
B2
Abstract:
A nitride semiconductor device includes: a first nitride semiconductor layer formed of non-doped AlXGa1-XN (0≰X<1); a second nitride semiconductor layer formed on the first nitride semiconductor layer of non-doped or n-type AlYGa1-YN (0
Inventors:
Kuraguchi Masahiko
Application Number:
JP2006286332A
Publication Date:
June 24, 2009
Filing Date:
October 20, 2006
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/338; H01L29/41; H01L29/417; H01L29/47; H01L29/778; H01L29/812; H01L29/872
Domestic Patent References:
| JP2006261642A | ||||
| JP2005136001A | ||||
| JP2007158143A |
Attorney, Agent or Firm:
Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki