Title:
レーザーマスク、レーザーマスクを利用したレーザー結晶化方法、及び平板表示装置の製造方法
Document Type and Number:
Japanese Patent JP4284272
Kind Code:
B2
Abstract:
A laser mask and method of crystallization using the same that can produce a polycrystalline silicon thin film having uniform crystallization characteristics. According to the present invention, a method of crystallization using a laser mask having a reference pattern in a first block and the reverse pattern of the reference pattern in a second block includes providing a substrate having a silicon thin film; positioning the first block of the laser mask over a portion of the silicon film and irradiating a first laser beam through the first block; and moving either the laser mask or the substrate to position the second block of the laser mask over the portion of the silicon film and irradiating a second laser beam through the second block.
Inventors:
Yesang Yu
Application Number:
JP2004374583A
Publication Date:
June 24, 2009
Filing Date:
December 24, 2004
Export Citation:
Assignee:
LG Display Company Limited
International Classes:
H01L21/20; H01L27/08; G02F1/136; G03F7/20; G03F9/00; H01L21/00; H01L21/268; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/786; H01L29/04
Domestic Patent References:
| JP2003045803A | ||||
| JP2003109903A | ||||
| JP2003309080A |
Attorney, Agent or Firm:
Michiharu Soga
Hidetoshi Furukawa
Suzuki Kenchi
Kajinami order
Hidetoshi Furukawa
Suzuki Kenchi
Kajinami order