Title:
絶縁ゲート型電界効果トランジスタ及びその製造方法
Document Type and Number:
Japanese Patent JP4292427
Kind Code:
B2
Abstract:
Provided is an IGFET capable of turning off when a reverse voltage is applied. The IGFET includes an n + -type first drain region (6), an n - -type second drain region (7), a p-type first body region (8), a p - -type second body region (9), an n-type first source region (10a), and an n + -type second source region (10b). Gate insulators (5) and gate electrodes (4) are arranged in trenches (11) formed on a semiconductor substrate (1). The source electrode (3) is in ohmic contact with the n-type first source region (10a) and the n + -type second source region (10b) and in schottky barrier contact with the p-- type second body region (9).
Inventors:
Ryoji Takahashi
Application Number:
JP2008548266A
Publication Date:
July 08, 2009
Filing Date:
November 30, 2007
Export Citation:
Assignee:
Sanken Electric Co., Ltd.
International Classes:
H01L29/78; H01L21/28; H01L21/336; H01L29/417
Attorney, Agent or Firm:
Noriji Takano