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Title:
シリコン単結晶ウエーハの製造方法およびシリコン単結晶ウエーハならびにエピタキシャルウエーハ
Document Type and Number:
Japanese Patent JP4296740
Kind Code:
B2
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Inventors:
Makoto Iida
Masahiro Kato
Akihiro Kimura
Application Number:
JP2001584610A
Publication Date:
July 15, 2009
Filing Date:
May 11, 2001
Export Citation:
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Assignee:
Shin-Etsu Semiconductor Co., Ltd.
International Classes:
C30B29/06; C30B15/00
Domestic Patent References:
JP11302098A
JP11043393A
JP3275598A
JP7029878B2
Foreign References:
WO2000022197A1
Attorney, Agent or Firm:
Mikio Yoshimiya



 
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