To provide a semiconductor memory device capable of highly discriminating information of memory cells.

Respective memory cells MC0, MC1, MC2, MC3 store information of one bit. Information stored in the respective memory cells MC0, MC1, MC2, MC3 is read out by comparing a first output corresponding to an output current from the memory cells MC0, MC1, MC2, MC3 when a current flows from a first input/output terminal to a second input/output terminal with a second output corresponding to an output current from the memory cells MC0, MC1, MC2, MC3 when a current flows from the second input/output terminal to the first input/output terminal.

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