Title:
酸化物単結晶の板状体の製造方法
Document Type and Number:
Japanese Patent JP4334773
Kind Code:
B2
Abstract:
A planar body with a good crystallinity is grown continuously and stably when a planar body of an oxide single crystal is grown by a micro pulling-down method. A raw material of the oxide single crystal is melted in a crucible 7. A fibrous seed crystal 15 is contacted to a melt 18, and then the melt 18 is pulled down from an opening 13c of the crucible 7 by lowering the seed crystal. A shoulder portion 14A is produced following the seed crystal, and a planar body 14B is produced following the shoulder portion. In this case, differences in lattice constants between each crystal axis of the seed crystal and each corresponding crystal axis of the shoulder portion are controlled at 1 % or less, respectively.
Inventors:
Katsuhiro Imai
Akihiko Honda
Minoru Imaeda
Akihiko Honda
Minoru Imaeda
Application Number:
JP2001018096A
Publication Date:
September 30, 2009
Filing Date:
January 26, 2001
Export Citation:
Assignee:
Nippon Insulator Co., Ltd.
International Classes:
C30B15/08; C30B15/00; C30B29/22
Domestic Patent References:
| JP8319191A | ||||
| JP9067189A | ||||
| JP8283096A | ||||
| JP8259376A | ||||
| JP6227899A |
Attorney, Agent or Firm:
Kosaku Sugimura