Title:
不揮発性DRAM及びその駆動方法
Document Type and Number:
Japanese Patent JP4336973
Kind Code:
B2
Abstract:
A method for operating a non-volatile dynamic random access memory (NVDRAM) device having a plurality of memory cells, each cell having a capacitor and a transistor having a floating gate includes the steps of (A) preparing a power-on mode for performing a DRAM operation; and (B) preparing a power-off mode for holding stored data in the memory cell.
Inventors:
An Jin Hiroshi
Hong Sun Hun
Park Yeon Shun
Lee Satoshi
Kinichi Asahi
Bee Hyun
Hong Sun Hun
Park Yeon Shun
Lee Satoshi
Kinichi Asahi
Bee Hyun
Application Number:
JP2004107398A
Publication Date:
September 30, 2009
Filing Date:
March 31, 2004
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
G11C14/00; G11C16/04; G11C11/24; G11C11/404; H01L21/8242; H01L27/105; H01L27/108
Domestic Patent References:
| JP10189891A | ||||
| JP6005801A | ||||
| JP2000077546A | ||||
| JP200571563A |
Attorney, Agent or Firm:
Eiji Saegusa
Yasumitsu Tate
Shinichi Mashita
Kimio Matsumoto
Tachibana Kenji
Ryuji Inuchi
Yasumitsu Tate
Shinichi Mashita
Kimio Matsumoto
Tachibana Kenji
Ryuji Inuchi