Title:
高輝度紫外線発光六方晶窒化ホウ素単結晶とその製造方法及び高輝度紫外線発光素子
Document Type and Number:
Japanese Patent JP4340753
Kind Code:
B2
Inventors:
Nao Taniguchi
Kenji Watanabe
Kenji Watanabe
Application Number:
JP2003388467A
Publication Date:
October 07, 2009
Filing Date:
November 18, 2003
Export Citation:
Assignee:
National Institute for Materials Science
International Classes:
C30B29/38; G02B1/02; C09K11/08; C09K11/63; C30B9/08; H01L33/30
Domestic Patent References:
| JP2001072499A | ||||
| JP2004035301A |
Other References:
小松正二郎, 神田久生, 倉嶋敬次, 岡田勝行, 桑野弘行, 守吉佑介,変調プラズマアシステドPLD法(MPA-PLD)によるsp3結合性5H-BNの225nm紫外発光,応用物理学会学術講演会講演予稿集,2002年 9月24日,Vol.63rd, No.1,Page.116、[26p-D-3]
Yano M, Yap YK, Okamoto M, et al.,Na: A new flux for growing hexagonal boron nitride crystals at low temperature ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,2000年 4月 1日,Vol.39, No.4A,p.L300-L302
ISHII T., et al.,Growth of single crystals of hexagonal boron nitride,JOURNAL OF CRYSTAL GROWTH,1983年,Vol.61,p.689-690
川崎和彦, CHEN X, 山中昭司,高温高圧塩化アンモニウム融体中でのh-BNの結晶成長,日本化学会講演予稿集,2001年 3月15日,Vol.79th, No.1,Page.268, [3E243]
KOMATSU S. et al,Highly crystalline 5H-polytype of sp`3 ́-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm. ,Appl Phys Lett,2002年12月 9日,Vol.81, No.24,Page.4547-4549
Yano M, Yap YK, Okamoto M, et al.,Na: A new flux for growing hexagonal boron nitride crystals at low temperature ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,2000年 4月 1日,Vol.39, No.4A,p.L300-L302
ISHII T., et al.,Growth of single crystals of hexagonal boron nitride,JOURNAL OF CRYSTAL GROWTH,1983年,Vol.61,p.689-690
川崎和彦, CHEN X, 山中昭司,高温高圧塩化アンモニウム融体中でのh-BNの結晶成長,日本化学会講演予稿集,2001年 3月15日,Vol.79th, No.1,Page.268, [3E243]
KOMATSU S. et al,Highly crystalline 5H-polytype of sp`3 ́-bonded boron nitride prepared by plasma-packets-assisted pulsed-laser deposition: An ultraviolet light emitter at 225 nm. ,Appl Phys Lett,2002年12月 9日,Vol.81, No.24,Page.4547-4549
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