Title:
フォトレジスト単量体、フォトレジスト共重合体、フォトレジスト組成物、及びフォトレジストパターンの形成方法
Document Type and Number:
Japanese Patent JP4344119
Kind Code:
B2
Abstract:
Photoresist monomers, polymers thereof, photoresist compositions containing the same for preventing acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area. The line edge roughness and slope pattern are improved when an ultrafine photoresist pattern is formed using photoresist copolymer having a multi-oxygen-containing compound as a repeating unit such as an ethyleneoxy moiety represented by Formula 1 with at least one polymerizable carbon-carbon double bond. In addition, the shape of pattern is improved by eliminating top loss and the adhesion of pattern to the substrate is improved. wherein n is an integer ranging from 1 to 5.
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Inventors:
Lee Nemori
Chung Zhao Chang
Request
Choi
Kim
Kim Dian
Chung Zhao Chang
Request
Choi
Kim
Kim Dian
Application Number:
JP2002243609A
Publication Date:
October 14, 2009
Filing Date:
August 23, 2002
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C08F234/02; G03F7/027; C07D273/00; C07D323/00; C08F226/06; C08F232/00; G03F7/039; H01L21/027
Domestic Patent References:
| JP6003826A | ||||
| JP2001056556A | ||||
| JP4126709A | ||||
| JP2003026728A |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune