Title:
感光性マトリックス型電子センサ及びマトリックス型イメージセンサの製造方法
Document Type and Number:
Japanese Patent JP4353635
Kind Code:
B2
Abstract:
A photosensitive matrix sensor include a faceplate of caesium iodide CsI mounted on a graphite base so as to transform high-frequency radiation, X-ray radiation, into low-frequency radiation, in the visible spectrum. It is shown that if the CsI is grown on such a graphite base, a sensor with much better resolution and much better sensitivity is obtained than if a gadolinium oxysulphide scintillator were used. Precautions in preparing the graphite may furthermore be taken rendering the surface of the graphite denser. It can thus be covered with a layer of amorphous carbon and or be made to undergo impregnation. This densification contributes to the homogeneity of the sensor. Protection of the CsI is then effected by a synthetic resin layer allied with a layer of liquid resin for optical coupling with a detector.
Inventors:
Rosier
Application Number:
JP2000528885A
Publication Date:
October 28, 2009
Filing Date:
January 26, 1999
Export Citation:
Assignee:
E2V Semiconductors
International Classes:
G01T1/20; G01T1/202; H01J29/38; G01T; H01J
Domestic Patent References:
| JP58118977A | ||||
| JP11202053A | ||||
| JP9061535A | ||||
| JP5242841A | ||||
| JP8054500A | ||||
| JP2571771B2 |
Attorney, Agent or Firm:
Sonoda Yoshitaka
Kobayashi Yoshinori
Kobayashi Yoshinori