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Patent Searching and Data


Title:
放射線検出器及び放射線検出器の製造方法
Document Type and Number:
Japanese Patent JP4353893
Kind Code:
B2
Abstract:
A method of forming a radiation detector compound comprising: (a) providing a mixture of Cd, Zn and Te; (b) heating the mixture to a liquid state; (c) adding to the liquid mixture a first dopant that adds shallow level donors (electrons) to the top of an energy band gap of said mixture when it is solidified; (d) adding to the liquid mixture a second dopant that adds deep level donors and/or acceptors to the middle of said band gap of said mixture when it is solidified; and (e) solidifying said mixture including said first and second dopants to form the compound.

Inventors:
Cerecus mackerel
Rin Kelvin Gee
Application Number:
JP2004512175A
Publication Date:
October 28, 2009
Filing Date:
June 10, 2003
Export Citation:
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Assignee:
EV PRODUCTS, INC.
International Classes:
G01T1/24; C01B19/00; C22C18/00; C22C20/00; C22C28/00; C30B9/00; C30B11/00; C30B17/00; C30B28/06; C30B29/48; H01L31/0296; H01L31/09; H01L31/103; H01L31/18
Domestic Patent References:
JP2001242255A
JP9043357A
Other References:
N. Romeo, 外2名,Low resistivity n-type CdTe thin films doped with lead,Thin Solid Films,Elsevier,1981年,Vol. 82,pp. L121-L123
E. Rzepka, 外3名,Deep centres for optical processing in CdTe,Materials Science and Engineering B,Elsevier,1993年,Vol. 16,pp. 262-267
O. Panchuk, 外8名,IV group dopant compensation effect in CdTe,Journal of Crystal Growth,Elsevier,1999年,Vol. 197,pp. 607-611
S. Chaudhuri, 外2名,Electrical and optical properties of CdTe films and junctions,Advances in Solar Energy Technology,Pergamon Press,1988年,Vol. 1,pp.175-179
Attorney, Agent or Firm:
Noboru Fujimoto