Title:
バイポーラ接合トランジスタおよびその形成方法
Document Type and Number:
Japanese Patent JP4355336
Kind Code:
B2
Abstract:
The present invention relates to bipolar junction transistors (BJTS). The collector region of each BJT is located in a semiconductor substrate surface and adjacent to a first shallow trench isolation (STI) region. A second STI region is provided, which extends between the first STI region and the collection region and undercuts a portion of the active base region with an undercut angle of not more than about 90°. For example, the second STI region may a substantially triangular cross-section with an undercut angle of less than about 90°, or a substantially rectangular cross-section with an undercut angle of about 90°. Such a second STI region can be fabricated using a porous surface section formed in an upper surface of the collector region.
Inventors:
Thomas Anthony Wallner
Stephen W. Bedel
Thomas N Adam
Joel pee dessor
Stephen W. Bedel
Thomas N Adam
Joel pee dessor
Application Number:
JP2006322586A
Publication Date:
October 28, 2009
Filing Date:
November 29, 2006
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/331; H01L21/76; H01L21/8222; H01L27/082; H01L29/737
Domestic Patent References:
| JP9199512A | ||||
| JP10056059A | ||||
| JP5315442A | ||||
| JP2164059A | ||||
| JP2004304190A | ||||
| JP6216235A | ||||
| JP59080941A | ||||
| JP5102171A | ||||
| JP2003243407A |
Foreign References:
| WO2005050742A1 |
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi
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