Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP4387111
Kind Code:
B2
Inventors:
Shunpei Yamazaki
Koichiro Tanaka
Hidekazu Miyairi
Koichiro Tanaka
Hidekazu Miyairi
Application Number:
JP2003011775A
Publication Date:
December 16, 2009
Filing Date:
January 21, 2003
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/336; H01L21/268; H01L29/786
Domestic Patent References:
| JP200068520A | ||||
| JP6315471A | ||||
| JP57109322A | ||||
| JP5175235A | ||||
| JP2003151906A |