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Title:
基板接合を利用して製造されたエアギャップ型FBARおよびデュプレクサとその製造方法
Document Type and Number:
Japanese Patent JP4401228
Kind Code:
B2
Abstract:
An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

Inventors:
Park Yoo
Song Tora
River pillar
Song Song Ji
Kimdeok
Application Number:
JP2004123327A
Publication Date:
January 20, 2010
Filing Date:
April 19, 2004
Export Citation:
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Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
B81B3/00; H03H9/17; B81C1/00; H01L41/08; H01L41/09; H01L41/22; H01L41/23; H01L41/313; H03H3/02; H03H9/70
Domestic Patent References:
JP8148968A
JP1157108A
JP275210A
Foreign References:
WO2002005425A1
Attorney, Agent or Firm:
Yukio Ono
Tomoko Inazumi