Title:
半絶縁ポリシリコン(SIPOS)膜を用いた電力半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4401453
Kind Code:
B2
Abstract:
A method for manufacturing a power semiconductor device including a semi-insulating polycrystalline silicon (SIPOS) film is provided. According to this method, first, a conductive collector region is formed in a semiconductor substrate. Then, a first insulating film, which exposes a portion of the semiconductor substrate in which a base region is to be formed, is formed on said semiconductor substrate in which the collector region is formed. A conductive base region is formed in the collector region. A second insulating film is formed over the entire surface of the semiconductor substrate. After exposing a portion of the semiconductor substrate in which an emitter region and a channel stop region are to be formed, impurities for the emitter region are implanted into the base region. Simultaneously, a third insulating film is formed over the entire surface of the semiconductor substrate, while a conductive emitter region is formed by diffusing the impurities. At least one of the first to third insulating films is left only in a field region between the base region and the channel stop region. Parts of the base region, the emitter region, and the channel stop region are exposed after forming a semi-insulating polycrystalline silicon (SIPOS) film on the entire surface of the resultant structure. A base electrode, an emitter electrode, and an equipotential metal ring are then formed, respectively contacting the base region, the emitter region, and the channel stop region.
Inventors:
Park
Hiroshi Park
Hiroshi Park
Application Number:
JP25529198A
Publication Date:
January 20, 2010
Filing Date:
September 09, 1998
Export Citation:
Assignee:
Fairchild Korea Semiconductor Co., Ltd.
International Classes:
H01L21/28; H01L21/331; H01L21/306; H01L21/329; H01L29/06; H01L29/40; H01L29/73; H01L29/732
Domestic Patent References:
| JP3058429A | ||||
| JP61168257A | ||||
| JP57092862A |
Foreign References:
| US5410177 |
Attorney, Agent or Firm:
Makoto Hagiwara