Title:
電界効果型トランジスタおよびその製造方法
Document Type and Number:
Japanese Patent JP4401826
Kind Code:
B2
Abstract:
An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1 in a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2 in a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.
Inventors:
Daisuke Miura
Hiroharu Nakayama
Onishi
Jun Kubota
Akane Masumoto
Satomi Sugiyama
Hiroharu Nakayama
Onishi
Jun Kubota
Akane Masumoto
Satomi Sugiyama
Application Number:
JP2004067440A
Publication Date:
January 20, 2010
Filing Date:
March 10, 2004
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L29/786; H01L51/05; H01L51/00; H01L51/30
Domestic Patent References:
| JP2003304014A | ||||
| JP2004006750A |
Attorney, Agent or Firm:
Keizo Nishiyama
Yuichi Uchio
Yuichi Uchio