Title:
半導体基板および半導体基板の製造方法
Document Type and Number:
Japanese Patent JP4406995
Kind Code:
B2
Abstract:
A Si substrate 1 with a SiGeC crystal layer 8 deposited thereon is annealed to form an annealed SiGeC crystal layer 10 on the Si substrate 1. The annealed SiGeC crystal layer includes a matrix SiGeC crystal layer 7, which is lattice-relieved and hardly has dislocations, and SiC microcrystals 6 dispersed in the matrix SiGeC crystal layer 7. A Si crystal layer is then deposited on the annealed SiGeC crystal layer 10, to form a strained Si crystal layer 4 hardly having dislocations.
Inventors:
Yoshihiko Kanzawa
Katsuya Nozawa
Tetsu Saitoh
Minoru Kubo
Katsuya Nozawa
Tetsu Saitoh
Minoru Kubo
Application Number:
JP2000086117A
Publication Date:
February 03, 2010
Filing Date:
March 27, 2000
Export Citation:
Assignee:
Panasonic Corporation
International Classes:
H01L21/205; C30B33/00; H01L21/20; H01L29/165; H01L29/24; H01L29/10
Domestic Patent References:
| JP11233440A | ||||
| JP722330A | ||||
| JP6224127A |
Other References:
WARREN P, MI J, OVERNEY F, DUTOIT M (Swiss Federal Inst. Technol., Lausanne, CHE),Thermal stability of Si/Si1-x-yGexCy/Si heterostructures grown by rapid thermal chemical vapor deposition.,J Cryst Growth ,NE,1995年12月,Vol.157 No.1/4,Page.414-419
LIU C W, ST AMOUR A, STURM J C (Princeton Univ., New Jersey), LACROIX Y R J, THEWALT M L W (Simon Fraser Univ., British Columbia, CAN), MAGEE C W (Evans East, New Jersey),Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates. ,J Appl Phys,米国,1996年 9月 1日,Vol.80 No.5,Page.3043-3047
S.Bodnar and J.L.Regolini,Growth of ternary alloy Si1-x-yGexCy by rapid thermal chemical vapor deposition,J. Vac. Sci. Technol. A,米国,1995年 9月,Vol.13, No.5,Page.2336-2340
LIU C W, ST AMOUR A, STURM J C (Princeton Univ., New Jersey), LACROIX Y R J, THEWALT M L W (Simon Fraser Univ., British Columbia, CAN), MAGEE C W (Evans East, New Jersey),Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates. ,J Appl Phys,米国,1996年 9月 1日,Vol.80 No.5,Page.3043-3047
S.Bodnar and J.L.Regolini,Growth of ternary alloy Si1-x-yGexCy by rapid thermal chemical vapor deposition,J. Vac. Sci. Technol. A,米国,1995年 9月,Vol.13, No.5,Page.2336-2340
Attorney, Agent or Firm:
Fumio Iwahashi
Hiroki Naito
Daisuke Nagano
Hiroki Naito
Daisuke Nagano