Title:
トンネル磁気抵抗素子の製造方法、トンネル磁気抵抗素子
Document Type and Number:
Japanese Patent JP4421065
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a defect-free III nitride thin film/insulating film. SOLUTION: A dopant molecular beam is stopped after aIII nitride thin film 52 is grown, a hydrocarbon gas is introduced into an atmosphere instead of it, and an insulating film 53 of III nitride thin film loaded with carbon is formed. Furthermore, a hydrocarbon gas is stopped from being introduced, a dopant molecular beam is generated together with a molecular beam containing III elements to form a nitride thin film 54 on the surface of the insulating film 53. The insulating film 53 is of III nitride thin film structure, so that an interface between the insulating film 53 and the III nitride thin films 52 and 54 is never disordered, and no defect is induced.
Inventors:
Saburo Shimizu
Sonoda Saki
Sonoda Saki
Application Number:
JP2000106282A
Publication Date:
February 24, 2010
Filing Date:
April 07, 2000
Export Citation:
Assignee:
ULVAC, Inc.
International Classes:
C30B23/08; H01L21/314; C30B29/38; H01L21/203; H01L27/10; H01L27/12; H01L29/78; H01L29/786; H01L29/80; H01L43/08
Domestic Patent References:
| JP11176838A | ||||
| JP11026383A | ||||
| JP2000068498A | ||||
| JP2001134911A | ||||
| JP11154388A |
Other References:
J. B. Webb, H. Tang, S. Rolfe, and J. A. Bardwell,Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy,Appl. Phys. Lett.,米国,1999年 8月16日,Volume 75, Issue 7,953-955
Attorney, Agent or Firm:
Shigeo Ishijima
Hideki Abe
Hideki Abe