Title:
MOS型固体撮像装置及びその製造方法
Document Type and Number:
Japanese Patent JP4426273
Kind Code:
B2
Abstract:
The MOS type solid-state imaging device has plural pixels each of which comprises a photo-diode and a MOS transistor on a substrate. A gate electrode is formed on the channel dope layer formed in the surface of the p-type well layer. By ion implantation of n-type impurity ions via the gate electrode as the mask, the n-type source region and the drain region are formed in the region corresponding to the MOS transistor, and the n-type impurity region is also formed in the region corresponding to the photo-diode. In the well layer, a high impurity density region as a hole pocket is self-aligned to the gate electrode.
Inventors:
Hirofumi Komori
Application Number:
JP2003415567A
Publication Date:
March 03, 2010
Filing Date:
December 12, 2003
Export Citation:
Assignee:
Innotech Corp.
International Classes:
H01L27/146; H01L21/00; H04N5/335; H04N5/357; H04N5/374
Domestic Patent References:
| JP2002353431A | ||||
| JP2001168310A | ||||
| JP2001223351A | ||||
| JP10125890A | ||||
| JP9260629A | ||||
| JP7099298A |
Attorney, Agent or Firm:
Kazunori Kobayashi