Title:
III族窒化物半導体素子およびエピタキシャル基板
Document Type and Number:
Japanese Patent JP4432827
Kind Code:
B2
Abstract:
Affords a Group III nitride semiconductor device having a structure that can improve the breakdown voltage. A Schottky diode (11) consists of a Group III nitride support substrate (13), a gallium nitride region (15), and a Schottky electrode (17). The Group III nitride support substrate (13) has electrical conductivity. The Schottky electrode (17) forms a Schottky junction on the gallium nitride region (15). The gallium nitride region (15) is fabricated on a principal face (13a) of the Group III nitride support substrate (13). The gallium nitride region (15) has a (1012)-plane XRD full-width-at-half-maximum of 100 sec or less.
Inventors:
Hirohira Miura
Makoto Kiyama
Takashi Sakurada
Makoto Kiyama
Takashi Sakurada
Application Number:
JP2005128470A
Publication Date:
March 17, 2010
Filing Date:
April 26, 2005
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L29/47; H01L21/20; H01L21/205; H01L29/872
Domestic Patent References:
| JP2003243302A | ||||
| JP2003012398A | ||||
| JP2003282863A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Masatoshi Shibata
Ichira Kondo
Shiro Terasaki
Masatoshi Shibata
Ichira Kondo