Title:
半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP4443008
Kind Code:
B2
Abstract:
To provide a semiconductor device which can retain information for a long period of time even in a case that the tunnel insulation film is thin. A semiconductor device comprises a first insulation film 14 formed on a semiconductor substrate 10, a floating gate electrode 22 formed on the first insulation film, a second insulation 24 film formed on the floating gate electrode, and a control gate electrode 26 formed on the second insulation film. A depletion layer is formed in the floating gate electrode near the first insulation film in a state that no voltage is applied between the floating gate electrode and the semiconductor substrate.
Inventors:
Usuki Tatsuya
Naoto Horiguchi
Naoto Horiguchi
Application Number:
JP2000198390A
Publication Date:
March 31, 2010
Filing Date:
June 30, 2000
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/8247; H01L21/28; H01L21/336; H01L27/115; H01L29/423; H01L29/788; H01L29/792
Domestic Patent References:
| JP7115144A | ||||
| JP2000040752A | ||||
| JP9008157A | ||||
| JP2000183190A | ||||
| JP2000150680A | ||||
| JP9205156A |
Attorney, Agent or Firm:
Yoshito Kitano