Title:
薄い金属膜に基づいた静磁波デバイス、これを製造するための方法、及びマイクロ波信号を処理するためのデバイスへの応用
Document Type and Number:
Japanese Patent JP4444836
Kind Code:
B2
Abstract:
The integrated magnetostatic wave device comprises a substrate ( 1 ), a conductive ferromagnetic thin film ( 2 ) of thickness lying in the range about 250 nm to 450 nm and preferably being equal to about 300 nm, said thin film ( 2 ) being deposited on said substrate ( 1 ), a first transducer antenna ( 10 ) for receiving microwave electrical signals disposed parallel to said ferromagnetic thin film ( 2 ) in the vicinity thereof in order to create magnetostatic waves or spin waves in said material by inductive coupling, and a second transducer antenna ( 20 ) for transmitting microwave electrical signals disposed parallel to said ferromagnetic thin film ( 2 ) in the vicinity thereof in order to be inductively coupled thereto and in order to deliver microwave electrical signals on the arrival of a magnetostatic wave in the ferromagnetic thin film ( 2 ), said second antenna ( 20 ) being situated on the same side of the ferromagnetic thin film ( 2 ) as the first antenna ( 10 ) so as to be essentially coplanar therewith.
Inventors:
Belu, Matthew
Fermont, Claude
Fermont, Claude
Application Number:
JP2004547721A
Publication Date:
March 31, 2010
Filing Date:
October 27, 2003
Export Citation:
Assignee:
Comisaria a Renergie Atomique
International Classes:
H01P1/23; H01P1/11; H01P1/38; H03H2/00
Domestic Patent References:
| JP3101104A | ||||
| JP4002201A | ||||
| JP2001185911A | ||||
| JP10065409A | ||||
| JP1221901A | ||||
| JP61181202A |
Other References:
小原淳二 等,ブラッグ反射型静磁波フィルタについて,2000年電子情報通信学会総合大会,日本,電子情報通信学会,2000年 4月20日,C-2-91
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Ryo Hashimoto
Tetsuya Kazama
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Ryo Hashimoto
Tetsuya Kazama