Title:
ヘテロ接合素子の制御方法
Document Type and Number:
Japanese Patent JP4446021
Kind Code:
B2
Inventors:
Fan harold
Naoyuki Nakagawa
Masashi Asai
Tomofumi Susaki
Naoyuki Nakagawa
Masashi Asai
Tomofumi Susaki
Application Number:
JP2004252809A
Publication Date:
April 07, 2010
Filing Date:
August 31, 2004
Export Citation:
Assignee:
Japan Science and Technology Agency
International Classes:
H01L21/331; H01L29/737; H01L29/82
Domestic Patent References:
| JP11274597A |
Foreign References:
| WO2003081680A1 |
Other References:
ZHANG,J. et al,Rectifying characteristic in all-perovskite oxide film p-n junction with room temperature ferromagnetism,Applied Physics Letters,2002年 6月10日,vol.80, no.23,pp.4378-4380
SUN,J.R. et al,Effects of magnetic field on the magnite-based bilayer junction,Applied Physics Letters,2004年 3月 1日,vol.84, no.9,pp.1528-1530
SUN,J.R. et al,Effects of magnetic field on the magnite-based bilayer junction,Applied Physics Letters,2004年 3月 1日,vol.84, no.9,pp.1528-1530
Attorney, Agent or Firm:
Yoshiki Hasegawa
Satoru Ishida
Satoru Ishida