有機半導体素子 - Dai Nippon Printing Co.,Ltd.

Title:

有機半導体素子

Document Type and Number:

Japanese Patent JP4447358

Kind Code:

B2

Abstract:

To provide an organic semiconductor element formed by using a wet type film formation method, and having an excellent element characteristic by preventing deterioration.

This organic semiconductor element has, on a substrate, two or more facing electrodes and at least one organic layer disposed between two of the electrode out of them, wherein the organic layer(s) and/or one or more kinds of the electrodes are formed by a wet type film formation method. The organic semiconductor element is characterized by that a protective layer having a charge transporting property and a solvent and/or gas barrier property is formed on the base side(s) of the organic layer(s) and/or the electrode(s) formed by the wet type film formation method.

Inventors:

Toshitaka Mori
Yasuyuki Oyagi
Daigo Aoki

Application Number:

JP2004108204A

Publication Date:

April 07, 2010

Filing Date:

March 31, 2004

Export Citation:

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