Title:
半導体装置
Document Type and Number:
Japanese Patent JP4449374
Kind Code:
B2
Abstract:
A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.
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Inventors:
Yoshiharu Kanegae
Iwasakizaki Fusei
Hiroshi Moriya
Iwasakizaki Fusei
Hiroshi Moriya
Application Number:
JP2003312077A
Publication Date:
April 14, 2010
Filing Date:
September 04, 2003
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L21/283; H01L29/78; H01L21/28; H01L21/314; H01L21/3205; H01L21/8234; H01L21/8238; H01L21/8247; H01L23/52; H01L27/04; H01L27/088; H01L27/115; H01L29/417; H01L29/423; H01L29/49; H01L29/51; H01L29/76; H01L29/788; H01L29/792
Domestic Patent References:
| JP10209440A | ||||
| JP58032471A | ||||
| JP4142079A | ||||
| JP2000183346A | ||||
| JP2003037266A | ||||
| JP11224947A | ||||
| JP2002170887A | ||||
| JP2001085547A | ||||
| JP2003086708A | ||||
| JP2005101503A |
Attorney, Agent or Firm:
Manabu Inoue