Title:
ボンドパッドおよびボンドパッド構造の製造方法
Document Type and Number:
Japanese Patent JP4451134
Kind Code:
B2
Abstract:
A bond pad is formed by first providing a planarized combination of copper and silicon oxide features in a bond pad region. The silicon oxide features are etched back to provide a plurality recesses in the copper in the bond pad region. A corrosion barrier is formed over the copper and the silicon oxide features in the recesses. Probing of the wafer is done by directly applying the probe to the copper. A wire bond is directly attached to the copper. The presence of the features improves probe performance because the probe is likely to slip. Also the probe is prevented from penetrating all the way through the copper because the recessed features are present. With the recesses in the copper, the wire bond more readily breaks down and penetrates the corrosion barrier and is also less likely to slip on the bond pad.
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Inventors:
Kobayashi, Thomas S.
Posdar, Scott Kay.
Posdar, Scott Kay.
Application Number:
JP2003529519A
Publication Date:
April 14, 2010
Filing Date:
August 20, 2002
Export Citation:
Assignee:
Freescale Semiconductor, Inc.
International Classes:
H01L21/60; H01L23/52; H01L21/3205; H01L23/485
Domestic Patent References:
| JP2000332017A | ||||
| JP2001223240A | ||||
| JP6318590A |
Foreign References:
| WO2001001478A1 | ||||
| WO2000021126A1 |
Attorney, Agent or Firm:
Atsushi Honda
Miho Ikegami
Miho Ikegami