Title:
ディスプレーデバイス用多結晶シリコン薄膜の製造方法及びレーザー結晶化用マスク
Document Type and Number:
Japanese Patent JP4454333
Kind Code:
B2
Abstract:
A polycrystalline silicon thin film to be used in display devices, the thin film comprising adjacent primary grain boundaries that are not parallel to each other and do not contact each other, wherein an area surrounded by the primary grain boundaries is larger than 1 μm2, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.
Inventors:
Park will
Megumi Park
Megumi Park
Application Number:
JP2004033412A
Publication Date:
April 21, 2010
Filing Date:
February 10, 2004
Export Citation:
Assignee:
Samsung Mobile Display Co., Ltd.
International Classes:
G02F1/136; H01L21/20; B23K26/073; H01L21/00; H01L21/268; H01L21/336; H01L21/77; H01L21/84; H01L27/15; H01L29/04; H01L29/26; H01L29/786; H01L31/036; H01L31/12; H05B33/00
Domestic Patent References:
| JP2003178978A |
Foreign References:
| WO2001018854A1 | ||||
| US6326286 |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Masakazu Ito
Yuko Hara
Masakazu Ito
Yuko Hara