Title:
磁気ランダムアクセスメモリ
Document Type and Number:
Japanese Patent JP4460965
Kind Code:
B2
Abstract:
A magnetic random access memory includes a magnetoresistive element which has a recording layer, a fixed layer, and an intermediate nonmagnetic layer, the recording layer comprising a first ferromagnetic layer formed on the intermediate nonmagnetic layer, a first nonmagnetic layer formed on the first ferromagnetic layer, a second ferromagnetic layer formed on the first nonmagnetic layer and magnetically coupled with the first ferromagnetic layer by first magnetic coupling, a second nonmagnetic layer formed on the second ferromagnetic layer, and a third ferromagnetic layer formed on the second nonmagnetic layer and magnetically coupled with the second ferromagnetic layer by second magnetic coupling, wherein one of a state in which the first magnetic coupling is anti-ferromagnetic coupling and the second magnetic coupling is ferromagnetic coupling, and a state in which the first magnetic coupling is ferromagnetic coupling and the second magnetic coupling is anti-ferromagnetic coupling is obtained.
Inventors:
Fukuzumi Yoshiaki
Kai Tadashi
Kai Tadashi
Application Number:
JP2004214755A
Publication Date:
May 12, 2010
Filing Date:
July 22, 2004
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/8246; G11C11/15; H01L27/105; H01L43/08
Domestic Patent References:
| JP2005505889A | ||||
| JP2004158766A | ||||
| JP2002299574A |
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto